2nd Year Physics Chapter 18 Online MCQ Test for 12th Class Physics Chapter 18 (Electronics)

ICS Part 2 Physics
Chapter 18 Test

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Physics ICS Part 2 Chapter 18 Online MCQ's Test

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Question # 1

NAND gate represented by:

Question # 2

An expression for gain of an inverting amplifier is

Question # 3

The circuit of full wave rectification consist of

Question # 4

X=A+B is the mathematical notation for.

Question # 5

In an N-type silicon, which of the following statement is true?

Question # 6

In case of op-amp as an inverting amplifier, V+ - V- = 0, this is because

Question # 7

The input resistance of an op amplifier is.

Question # 8

One use of a single p-n junction semiconductor in an electrical circuit is a

Question # 9

The chargeless region after formation of Pn junction is called:

Question # 10

Doping is made comparatively larger in

Question # 11

Rectification is the process of converting.

Question # 12

For normal transistor the emitter current can be given by

Question # 13

Conversion of A.C into D.C is called:

Question # 14

Transistor was discovered by

Question # 15

The use of LDR is in the circuit of.

Question # 16

A device which converts low voltage or current to high voltage or current is called.

Question # 17

Logic gate can control some physical parameters like.

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18th Chapter

ICS Part 2 Physics Chapter 18 Online Test MCQ's

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FSc Part II Physics Chapter 0 Important MCQ's

Sr.# Question Answer
1 Which device is used as a rectifier?
A. Capacitor
B. Transistor
C. Diode
D. Transformer
2 The output voltage of a rectifier is.
A. Smooth
B. Pulsating
C. Alternating
D. Per featly direct
3 The potential barrier for silicon is.
A. 0.7 V
B. 0.5 V
C. 0.3 V
D. 0.9 V
4 For normal transistor the emitter current can be given by
A. IE = IC
B. IE = IC + IB
C. IE = IB
D. None of these
5 Conversation of only one half of A.C. into D.C. is called.
A. Half wave amplification
B. Wave amplification
C. Half wave electrification
D. Half wave rectification
6 Depletion region carries.
A. -ve charge
B. +ve charge
C. Ions
D. No charge
7 Greater concentration of impurity is added in.
A. Base
B. Emitter
C. Collector
D. LED
8 When a PN-Junction is reverse biased the depletion region is.
A. Widened
B. Narrowed
C. Normal
D. None of these
9 The term invertor is used for.
A. NOR gate
B. XNOR gate
C. NAND gate
D. NOT gate
10 The gate, which changes the logic level to its opposite level is called
A. NOR gate
B. AND gate
C. OR gate
D. NOT gate

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