2nd Year Physics Chapter 18 Online MCQ Test for 12th Class Physics Chapter 18 (Electronics)

ICS Part 2 Physics
Chapter 18 Test

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Physics ICS Part 2 Chapter 18 Online MCQ's Test

00:00
Question # 1

A two inputs NAND gat with inputs a and b has an output '0' if.

Question # 2

The gain of transistor amplifier depends upon

Question # 3

The sensor of light is.

Question # 4

An expression for gain of an inverting amplifier is

Question # 5

The input resistance of an op amplifier is.

Question # 6

A.C. can be converted into D.C. by

Question # 7

Light emitting diodes are made from semiconductors.

Question # 8

The ratio Beta in transistor is called.

Question # 9

Which one has greater cone of impurity among all:

Question # 10

Minimum number of semi conductor diodes required for full wave rectification are.

Question # 11

Photo diode detects.

Question # 12

The p-n junction in which p side is connected to+ive and n-side is -ve the junction is said to be:

Question # 13

For normal transistor the emitter current can be given by

Question # 14

When a PN-Junction is reverse biased the depletion region is.

Question # 15

The potential difference across the depletion region of germanium is.

Question # 16

Transistors are made from

Question # 17

NAND gate represented by:

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18th Chapter

ICS Part 2 Physics Chapter 18 Online Test MCQ's

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FSc Part II Physics Chapter 0 Important MCQ's

Sr.# Question Answer
1 In case of reverse biasing, current is flown due to:
A. Minority charge carriers
B. Majority charge carriers
C. Electrons
D. Protons
2 Greater concentration of impurity is added in.
A. Base
B. Emitter
C. Collector
D. LED
3 Photo diode detects.
A. Visible light
B. Radio waves
C. X rays
D. All of them
4 The gain of transistor amplifier depends upon
A. Resistance connected with collector
B. Resistance connected with base voltage
C. Input voltage
D. Output voltage
5 Photodiode is used for:
A. Detection of current
B. Detection of heat
C. Detection of light
D. Both a & b
6 The p-n junction in which p side is connected to+ive and n-side is -ve the junction is said to be:
A. Neutral
B. Forward biased
C. Reversed biased
D. None of above
7 The P.D develop in case of silicon is:
A. 0.7V
B. 0.3V
C. 0.5V
D. 0.9V
8 For rectification we use.
A. Transformer
B. Diode
C. Choke
D. Generator
9 The term invertor is used for.
A. NOR gate
B. XNOR gate
C. NAND gate
D. NOT gate
10 The reverse saturation current in a PN junction diode is only due to:
A. Majority carriers
B. Minoritycarriers
C. Acceptor ions
D. Donor ions

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