2nd Year Physics Chapter 18 Online MCQ Test for 12th Class Physics Chapter 18 (Electronics)

ICS Part 2 Physics
Chapter 18 Test

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MCQ's Test For Chapter 0 "Physics ICS Part 2 Chapter 18 Online MCQ's Test"

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Physics ICS Part 2 Chapter 18 Online MCQ's Test

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Question # 1

The average gap for Germanium at 0K is

Question # 2

In case of op-amp as an inverting amplifier, V+ - V- = 0, this is because

Question # 3

For normal transistor the emitter current can be given by

Question # 4

The device which is used as amplifier and works with the negative feedback is.

Question # 5

Photodiode is used for:

Question # 6

An expression for gain of an inverting amplifier is

Question # 7

The gain of transistor amplifier depends upon

Question # 8

Truth table of logic function.

Question # 9

The central region of a transistor is called.

Question # 10

The input resistance of an op amplifier is.

Question # 11

Which component of the transistor has greater contrition of impurity.

Question # 12

The potential barrier for silicon is.

Question # 13

The chargeless region after formation of Pn junction is called:

Question # 14

One use of a single p-n junction semiconductor in an electrical circuit is a

Question # 15

The output voltage of a rectifier is.

Question # 16

_______ is the building block of every electronic circuit.

Question # 17

A device which converts low voltage or current to high voltage or current is called.

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18th Chapter

ICS Part 2 Physics Chapter 18 Online Test MCQ's

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FSc Part II Physics Chapter 0 Important MCQ's

Sr.# Question Answer
1 The potential difference across depletion region in case of Si is
A. 0.6 volt
B. 0.9 volt
C. 0.7 volt
D. 0.2 volt
2 For normal use:
A. Emitter base function is reversed biased
B. Collector base junction is reserved biased
C. Emitter base junction is forward biased
D. Both c and b
3 A transistor has:
A. Two regions
B. Three regions
C. Single regions
D. Four regions
4 The gate, which changes the logic level to its opposite level is called
A. NOR gate
B. AND gate
C. OR gate
D. NOT gate
5 Light emitting diodes are made from semiconductors.
A. Silicon
B. Germanium
C. Carbon
D. Gallium arsenide
6 A diode characteristics curve is a plot between
A. Current and resistance
B. Voltage and time
C. Voltage and current
D. Current and time
7 Doping is made comparatively larger in
A. Emitter
B. Base
C. Collector
D. P -type semi conductor
8 OR gate is represented by:
A. X = A+B
B. X=A.B
C. X=A+B
D. X=A.B
9 The term invertor is used for.
A. NOR gate
B. XNOR gate
C. NAND gate
D. NOT gate
10 Logic gate can control some physical parameters like.
A. Temperature, Pressure
B. Resistance, Inductance
C. Capacitance, Impedance
D. Current, voltage

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