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ICS Part 2 Physics
Chapter 18 Test
Start Chapter 18 Test
ICS Part 2 Physics Chapter Wise Test
(English Medium)
MCQ's Test For Chapter 0 "Physics ICS Part 2 Chapter 18 Online MCQ's Test"
Try The MCQ's Test For Chapter 0 "Physics ICS Part 2 Chapter 18 Online MCQ's Test"
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Total Questions17
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Time Allowed20
Physics ICS Part 2 Chapter 18 Online MCQ's Test
00:00
Question # 1
Minimum number of semi conductor diodes required for full wave rectification are.
Question # 2
A PN junction can not be sued a.
Question # 3
Which component of the transistor has greater contrition of impurity.
Question # 4
The ratio Beta in transistor is called.
Question # 5
The average gap for Germanium at 0K is
Question # 6
Transistors are made from
Question # 7
For normal use:
Question # 8
The gate, which changes the logic level to its opposite level is called
Question # 9
A.C. can be converted into D.C. by
Question # 10
In an N-type silicon, which of the following statement is true?
Question # 11
The output from a full wave rectifier is
Question # 12
Photo diode detects.
Question # 13
Conversation of only one half of A.C. into D.C. is called.
Question # 14
Which factor does not affect the conductivity of PN-Junction diode.
Question # 15
The symbol of p-n-p transistor is
Question # 16
In a certain circuit, IB = 40 µA, IC = 20 mA
Question # 17
The potential difference across the depletion region of germanium is.
ICS Part 2 Physics Chapter 18 Online Test MCQ's
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FSc Part II Physics Chapter 0 Important MCQ's
| Sr.# | Question | Answer |
|---|---|---|
| 1 | Which one has greater cone of impurity among all: |
A. Emitter
B. Base
C. Collector
D. All are pure
|
| 2 | The ratio of potential barriers of Ge to Si at room temperatrue is. |
A. 7:3
B. 1:3
C. 2:5
D. 3:7
|
| 3 | Reverse current flows due to |
A. Majority charge carriers
B. Minority charge carriers
C. Electrons
D. Holes
|
| 4 | A light emitting diode emits light only when |
A. Reverse biased
B. Forward biased
C. Unbiased
D. None of these
|
| 5 | The P.D develop in case of silicon is: |
A. 0.7V
B. 0.3V
C. 0.5V
D. 0.9V
|
| 6 | Which component of the transistor has greater contrition of impurity. |
A. Base
B. Emitter
C. Collector
D. Emitter and collector
|
| 7 | Greater concentration of impurity is added in. |
A. Base
B. Emitter
C. Collector
D. LED
|
| 8 | A diode characteristics curve is a plot between |
A. Current and resistance
B. Voltage and time
C. Voltage and current
D. Current and time
|
| 9 | The use of LDR is in the circuit of. |
A. Logic gate
B. Rectifier
C. Oscillator
D. High Switch
|
| 10 | Which is not fundamental logic gate. |
A. NOT
B. AND
C. OR
D. NAND
|
Test Questions
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