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ICS Part 2 Physics
Chapter 18 Test
Start Chapter 18 Test
ICS Part 2 Physics Chapter Wise Test
(English Medium)
MCQ's Test For Chapter 0 "Physics ICS Part 2 Chapter 18 Online MCQ's Test"
Try The MCQ's Test For Chapter 0 "Physics ICS Part 2 Chapter 18 Online MCQ's Test"
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Total Questions17
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Time Allowed20
Physics ICS Part 2 Chapter 18 Online MCQ's Test
00:00
Question # 1
The gain of transistor amplifier depends upon
Question # 2
The use of LDR is in the circuit of.
Question # 3
X=A+B is the mathematical notation for.
Question # 4
In an N-type silicon, which of the following statement is true?
Question # 5
The ratio of potential barriers of Ge to Si at room temperatrue is.
Question # 6
Which factor does not affect the conductivity of PN-Junction diode.
Question # 7
Transistor was discovered by
Question # 8
Reverse current flows due to
Question # 9
The input resistance of an op amplifier is.
Question # 10
Greater concentration of impurity is added in.
Question # 11
The output voltage of a rectifier is.
Question # 12
The output from a full wave rectifier is
Question # 13
The impurity in the germinium is usually in the ratio of
Question # 14
Depletion region carries.
Question # 15
Minimum number of semi conductor diodes required for full wave rectification are.
Question # 16
A diode characteristic curve is a plot between
Question # 17
Most of the electrons in the base of an NPN transistor flow:
ICS Part 2 Physics Chapter 18 Online Test MCQ's
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FSc Part II Physics Chapter 0 Important MCQ's
| Sr.# | Question | Answer |
|---|---|---|
| 1 | The term invertor is used for. |
A. NOR gate
B. XNOR gate
C. NAND gate
D. NOT gate
|
| 2 | The central region of a transistor is called. |
A. Emitter
B. Collector
C. Base
D. Neutral
|
| 3 | In full wave rectification number of diodes required are equal to. |
A. 2
B. 3
C. 4
D. 5
|
| 4 | Which is not fundamental logic gate. |
A. NOT
B. AND
C. OR
D. NAND
|
| 5 | Transistor was discovered by |
A. Young
B. Curie
C. John Bardeen
D. Shale's
|
| 6 | The output voltage of a rectifier is. |
A. Smooth
B. Pulsating
C. Alternating
D. Per featly direct
|
| 7 | A.C. can be converted into D.C. by |
A. An oscillator
B. Detector
C. An amplifier
D. Rectifier
|
| 8 | The potential difference across depletion region in case of Si is |
A. 0.6 volt
B. 0.9 volt
C. 0.7 volt
D. 0.2 volt
|
| 9 | When a PN-Junction is reverse biased the depletion region is. |
A. Widened
B. Narrowed
C. Normal
D. None of these
|
| 10 | Light emitting diodes are made from semiconductors. |
A. Silicon
B. Germanium
C. Carbon
D. Gallium arsenide
|
Test Questions