2nd Year Physics Chapter 18 Online MCQ Test for 12th Class Physics Chapter 18 (Electronics)

ICS Part 2 Physics
Chapter 18 Test

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ICS Part 2 Physics Chapter Wise Test
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MCQ's Test For Chapter 0 "Physics ICS Part 2 Chapter 18 Online MCQ's Test"

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Physics ICS Part 2 Chapter 18 Online MCQ's Test

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Question # 1

In an N-type silicon, which of the following statement is true?

Question # 2

A device which converts low voltage or current to high voltage or current is called.

Question # 3

The input resistance of an op amplifier is.

Question # 4

The gate, which changes the logic level to its opposite level is called

Question # 5

The chargeless region after formation of Pn junction is called:

Question # 6

Base of transistor is of order:

Question # 7

A diode characteristics curve is a plot between

Question # 8

A.C. can be converted into D.C. by

Question # 9

When transistor are used in digital circuits they usually operate in the :

Question # 10

In a certain circuit, IB = 40 µA, IC = 20 mA

Question # 11

For automatic Switching of streetlight, the op amplifier is used as.

Question # 12

The central region of a transistor is called.

Question # 13

The potential difference across the depletion region of germanium is.

Question # 14

Conversion of A.C into D.C is called:

Question # 15

The reverse saturation current in a PN junction diode is only due to:

Question # 16

The open loop gain of the amplifier is order of.

Question # 17

The device which is used as amplifier and works with the negative feedback is.

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FSc Part II Physics Chapter 0 Important MCQ's

Sr.# Question Answer
1 In case of reverse biasing, current is flown due to:
A. Minority charge carriers
B. Majority charge carriers
C. Electrons
D. Protons
2 The reverse saturation current in a PN junction diode is only due to:
A. Majority carriers
B. Minoritycarriers
C. Acceptor ions
D. Donor ions
3 When transistor are used in digital circuits they usually operate in the :
A. Active region
B. Break down region
C. Saturation & cutoff regions
D. Linear region
4 The potential barrier for silicon is.
A. 0.7 V
B. 0.5 V
C. 0.3 V
D. 0.9 V
5 In a transistor, collector current is controlled by:
A. Collector voltage
B. Base current
C. Collector resistance
D. All of the above
6 A.C. can be converted into D.C. by
A. An oscillator
B. Detector
C. An amplifier
D. Rectifier
7 A diode characteristic curve is a plot between
A. Current and time
B. Voltage and time
C. Voltage and current
D. Forward voltage and reverse voltage
8 Photodiode is used for:
A. Detection of current
B. Detection of heat
C. Detection of light
D. Both a & b
9 One use of a single p-n junction semiconductor in an electrical circuit is a
A. Rectifier
B. Transistor
C. Battery
D. Diode
10 A diode characteristics curve is a plot between
A. Current and resistance
B. Voltage and time
C. Voltage and current
D. Current and time

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