2nd Year Physics Chapter 18 Online MCQ Test for 12th Class Physics Chapter 18 (Electronics)

ICS Part 2 Physics
Chapter 18 Test

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Physics ICS Part 2 Chapter 18 Online MCQ's Test

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Question # 1

The potential difference across depletion region in case of Si is

Question # 2

The average gap for Germanium at 0K is

Question # 3

Truth table of logic function.

Question # 4

A two inputs NAND gat with inputs a and b has an output '0' if.

Question # 5

the number of terminals in a semiconductor diode are

Question # 6

In a transistor, collector current is controlled by:

Question # 7

The ratio of potential barriers of Ge to Si at room temperatrue is.

Question # 8

The central region of a transistor is called.

Question # 9

Doping is made comparatively larger in

Question # 10

The P.D develop in case of silicon is:

Question # 11

NAND gate represented by:

Question # 12

The potential difference across the depletion region of germanium is.

Question # 13

Transistor was invented by:

Question # 14

Photo diode is used for detection of.

Question # 15

Transistors are made from

Question # 16

When a PN-Junction is reverse biased the depletion region is.

Question # 17

Automatic function of street light can be done by the use of.

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ICS Part 2 Physics Chapter 18 Online Test MCQ's

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FSc Part II Physics Chapter 0 Important MCQ's

Sr.# Question Answer
1 The term invertor is used for.
A. NOR gate
B. XNOR gate
C. NAND gate
D. NOT gate
2 Minimum number of semi conductor diodes required for full wave rectification are.
A. 1
B. 2
C. 3
D. 4
3 The open loop gain of the amplifier is order of.
A. 106
B. 105
C. 107
D. 103
4 X=A+B is the mathematical notation for.
A. OR gate
B. NOR gate
C. NAND gate
D. AND gate
5 Rectification is the process of converting.
A. D.C. into A.C.
B. A.C. in to D.C.
C. Low signal to high
D. High signal to low
6 The colour of light emitted by a LED depends on.
A. It forward biased
B. Its reverse biased
C. Unbiased
D. None of these
7 A photo diode can turn its current ON and OFF in
A. Micro seconds
B. Mega seconds
C. Nano seconds
D. Mili seconds
8 The P.D develop in case of germanium is:
A. 0.3
B. 0.7
C. 0.5
D. 0.9
9 OR gate is represented by:
A. X = A+B
B. X=A.B
C. X=A+B
D. X=A.B
10 Improper bisting of a transistor circiut produces:
A. Heavy loading of emitter current
B. Distortion in the output output signal
C. Excessive heat at collector terminal
D. Faculty location of load line

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