2nd Year Physics Chapter 18 Online MCQ Test for 12th Class Physics Chapter 18 (Electronics)

ICS Part 2 Physics
Chapter 18 Test

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MCQ's Test For Chapter 0 "Physics ICS Part 2 Chapter 18 Online MCQ's Test"

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Physics ICS Part 2 Chapter 18 Online MCQ's Test

00:00
Question # 1

The device which is used as amplifier and works with the negative feedback is.

Question # 2

The output of two input is zero only when its.

Question # 3

The symbol of p-n-p transistor is

Question # 4

A photo diode can turn its current ON and OFF in

Question # 5

The potential difference across the depletion region of germanium is.

Question # 6

A two inputs NAND gat with inputs a and b has an output '0' if.

Question # 7

The output voltage of a rectifier is.

Question # 8

In photovoltaic cell, current is directly proportional to.

Question # 9

The resistance between the inverting (-) and non inverting inputs is called Input resistance and is the order of.

Question # 10

When a PN-Junction is reverse biased the depletion region is.

Question # 11

The term invertor is used for.

Question # 12

Which device is used as a rectifier?

Question # 13

The mathematical symbol for NOR operation is

Question # 14

In a certain circuit, IB = 40 µA, IC = 20 mA

Question # 15

The device which are required to convert various physical quantities into electric voltage are called.

Question # 16

Conversion of A.C into D.C is called:

Question # 17

Light emitting diodes are made from semiconductors.

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18th Chapter

ICS Part 2 Physics Chapter 18 Online Test MCQ's

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FSc Part II Physics Chapter 0 Important MCQ's

Sr.# Question Answer
1 Improper bisting of a transistor circiut produces:
A. Heavy loading of emitter current
B. Distortion in the output output signal
C. Excessive heat at collector terminal
D. Faculty location of load line
2 The p-n junction in which p side is connected to+ive and n-side is -ve the junction is said to be:
A. Neutral
B. Forward biased
C. Reversed biased
D. None of above
3 The potential barrier for silicon is.
A. 0.7 V
B. 0.5 V
C. 0.3 V
D. 0.9 V
4 The potential difference across the depletion region of germanium is.
A. 0.3 V
B. 0.5 V
C. 0.7 V
D. 0.8 V
5 The P.D develop in case of germanium is:
A. 0.3
B. 0.7
C. 0.5
D. 0.9
6 In a certain circuit, IB = 40 µA, IC = 20 mA
A. 450 amp
B. 0.45 amp
C. 5 m amp
D. 500 amp
7 The impurity in the germinium is usually in the ratio of
A. 1:106
B. 1:104
C. 1:108
D. 1:1010
8 Logic gate can control some physical parameters like.
A. Temperature, Pressure
B. Resistance, Inductance
C. Capacitance, Impedance
D. Current, voltage
9 One use of a single p-n junction semiconductor in an electrical circuit is a
A. Rectifier
B. Transistor
C. Battery
D. Diode
10 A diode characteristics curve is a plot between
A. Current and resistance
B. Voltage and time
C. Voltage and current
D. Current and time

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