Second Year Physics Chapter 18 Online MCQ Test for 2nd Year Physics Chapter 18 Electronics Preparation

FSC Part 2 Physics
Chapter 18 Test

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Physics FSC Part 2 Chapter 18 Online MCQ's Test

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Question # 1

In a transistor, collector current is controlled by:

Question # 2

NAND gate represented by:

Question # 3

For normal use:

Question # 4

Which component of the transistor has greater contrition of impurity.

Question # 5

A transistor has parts:

Question # 6

Photo diode detects.

Question # 7

Doping is made comparatively larger in

Question # 8

Reverse current flows due to

Question # 9

In case of reverse biasing, current is flown due to:

Question # 10

The device which are required to convert various physical quantities into electric voltage are called.

Question # 11

In an N-type silicon, which of the following statement is true?

Question # 12

The potential difference across the depletion region of germanium is.

Question # 13

The P.D develop in case of germanium is:

Question # 14

A transistor has:

Question # 15

Most of the electrons in the base of an NPN transistor flow:

Question # 16

The P.D develop in case of silicon is:

Question # 17

The potential difference across depletion region in case of Si is

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18th Chapter

FSC Part 2 Physics Chapter 18 Online Test MCQ's

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FSc Part II Physics Chapter 0 Important MCQ's

Sr.# Question Answer
1 Photo diode detects.
A. Visible light
B. Radio waves
C. X rays
D. All of them
2 Logic gate can control some physical parameters like.
A. Temperature, Pressure
B. Resistance, Inductance
C. Capacitance, Impedance
D. Current, voltage
3 In a transistor, collector current is controlled by:
A. Collector voltage
B. Base current
C. Collector resistance
D. All of the above
4 The central region of a transistor is called.
A. Emitter
B. Collector
C. Base
D. Neutral
5 For automatic Switching of streetlight, the op amplifier is used as.
A. Inductor
B. Converter
C. Comparator
D. Thermistor
6 One use of a single p-n junction semiconductor in an electrical circuit is a
A. Rectifier
B. Transistor
C. Battery
D. Diode
7 For normal transistor the emitter current can be given by
A. IE = IC
B. IE = IC + IB
C. IE = IB
D. None of these
8 Improper bisting of a transistor circiut produces:
A. Heavy loading of emitter current
B. Distortion in the output output signal
C. Excessive heat at collector terminal
D. Faculty location of load line
9 In full wave rectification number of diodes required are equal to.
A. 2
B. 3
C. 4
D. 5
10 The chargeless region after formation of Pn junction is called:
A. Free region
B. Depletion region
C. Field region
D. U.V region

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