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FSC Part 2 Physics
Chapter 18 Test
Start Chapter 18 Test
FSC Part 2 Physics Chapter Wise Test
(English Medium)
MCQ's Test For Chapter 0 "Physics FSC Part 2 Chapter 18 Online MCQ's Test"
Try The MCQ's Test For Chapter 0 "Physics FSC Part 2 Chapter 18 Online MCQ's Test"
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Total Questions17
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Time Allowed20
Physics FSC Part 2 Chapter 18 Online MCQ's Test
00:00
Question # 1
Transistor was invented by:
Question # 2
The circuit of full wave rectification consist of
Question # 3
Rectification is the process of converting.
Question # 4
The P.D develop in case of germanium is:
Question # 5
The output from a full wave rectifier is
Question # 6
The mathematical symbol for NOR operation is
Question # 7
An expression for gain of an inverting amplifier is
Question # 8
X=A+B is the mathematical notation for.
Question # 9
The device which are required to convert various physical quantities into electric voltage are called.
Question # 10
Which component of the transistor has greater contrition of impurity.
Question # 11
The open loop gain of the amplifier is order of.
Question # 12
The chargeless region after formation of Pn junction is called:
Question # 13
NAND gate represented by:
Question # 14
A light emitting diode emits light only when
Question # 15
The potential difference across depletion region in case of Si is
Question # 16
OR gate is represented by:
Question # 17
The device which is used as amplifier and works with the negative feedback is.
FSC Part 2 Physics Chapter 18 Online Test MCQ's
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FSc Part II Physics Chapter 0 Important MCQ's
| Sr.# | Question | Answer |
|---|---|---|
| 1 | Most of the electrons in the base of an NPN transistor flow: |
A. Out of the base lead
B. Into the collector
C. Into the emit
D. Into the base supply
|
| 2 | The p-n junction in which p side is connected to+ive and n-side is -ve the junction is said to be: |
A. Neutral
B. Forward biased
C. Reversed biased
D. None of above
|
| 3 | Light emitting diodes are made from semiconductors. |
A. Silicon
B. Germanium
C. Carbon
D. Gallium arsenide
|
| 4 | NAND gate represented by: |
A. X = A. B
B. X = A+B
C. X= A.B
D. X=|A+B|
|
| 5 | A device which converts low voltage or current to high voltage or current is called. |
A. Transformer
B. AC generator
C. Amplifier
D. Rectifier
|
| 6 | The ratio Beta in transistor is called. |
A. Voltage gain
B. Emitter gain
C. Current gain
D. Nuclear gain
|
| 7 | For rectification we use. |
A. Transformer
B. Diode
C. Choke
D. Generator
|
| 8 | For normal transistor the emitter current can be given by |
A. IE = IC
B. IE = IC + IB
C. IE = IB
D. None of these
|
| 9 | OR gate is represented by: |
A. X = A+B
B. X=A.B
C. X=A+B
D. X=A.B
|
| 10 | A two inputs NAND gat with inputs a and b has an output '0' if. |
A. B is zero
B. A is zero
C. Both A and B are 1
D. Both A and B are '0'
|
Test Questions