Second Year Physics Chapter 18 Online MCQ Test for 2nd Year Physics Chapter 18 Electronics Preparation

FSC Part 2 Physics
Chapter 18 Test

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Physics FSC Part 2 Chapter 18 Online MCQ's Test

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Question # 1

Transistors are made from

Question # 2

The ratio of potential barriers of Ge to Si at room temperatrue is.

Question # 3

The average gap for Germanium at 0K is

Question # 4

The device which is used as amplifier and works with the negative feedback is.

Question # 5

A device which converts low voltage or current to high voltage or current is called.

Question # 6

When a PN-Junction is reverse biased the depletion region is.

Question # 7

The open loop gain of the amplifier is order of.

Question # 8

In full wave rectification number of diodes required are equal to.

Question # 9

The ratio Beta in transistor is called.

Question # 10

The potential difference across the depletion region of germanium is.

Question # 11

OR gate is represented by:

Question # 12

The P.D develop in case of germanium is:

Question # 13

Which one has greater cone of impurity among all:

Question # 14

Light emitting diodes are made from semiconductors.

Question # 15

A diode characteristic curve is a plot between

Question # 16

The output voltage of a rectifier is.

Question # 17

Greater concentration of impurity is added in.

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FSC Part 2 Physics Chapter 18 Online Test MCQ's

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FSc Part II Physics Chapter 0 Important MCQ's

Sr.# Question Answer
1 Logic gate can control some physical parameters like.
A. Temperature, Pressure
B. Resistance, Inductance
C. Capacitance, Impedance
D. Current, voltage
2 In an N-type silicon, which of the following statement is true?
A. Electrons are majority carriers & trivalent atoms are the dopants
B. Electrons are majority carriers & pentavalent atoms are the dopants
C. Holes are minority carriers & pentavalent atoms are the dopants.
D. Holes are minority carriers & trivavalent atoms are the dopants.
3 The device which is used as amplifier and works with the negative feedback is.
A. Operational amplifier
B. P-n-p transistor
C. n-p-n transistor
D. Transistor
4 For rectification we use.
A. Transformer
B. Diode
C. Choke
D. Generator
5 The p-n junction in which p side is connected to+ive and n-side is -ve the junction is said to be:
A. Neutral
B. Forward biased
C. Reversed biased
D. None of above
6 Automatic function of street light can be done by the use of.
A. Inductor
B. Rectifier
C. Comparator
D. emf
7 The potential difference across the depletion region of germanium is.
A. 0.3 V
B. 0.5 V
C. 0.7 V
D. 0.8 V
8 A diode characteristics curve is a plot between
A. Current and resistance
B. Voltage and time
C. Voltage and current
D. Current and time
9 In a certain circuit, IB = 40 µA, IC = 20 mA
A. 450 amp
B. 0.45 amp
C. 5 m amp
D. 500 amp
10 Photo diode is used for detection of.
A. Heat
B. Magnet
C. Current
D. Light

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