Second Year Physics Chapter 18 Online MCQ Test for 2nd Year Physics Chapter 18 Electronics Preparation

FSC Part 2 Physics
Chapter 18 Test

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Physics FSC Part 2 Chapter 18 Online MCQ's Test

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Question # 1

For automatic Switching of streetlight, the op amplifier is used as.

Question # 2

One use of a single p-n junction semiconductor in an electrical circuit is a

Question # 3

Doping is made comparatively larger in

Question # 4

Rectification is the process of converting.

Question # 5

In an N-type silicon, which of the following statement is true?

Question # 6

The output of two input is zero only when its.

Question # 7

The output voltage of a rectifier is.

Question # 8

Which component of the transistor has greater contrition of impurity.

Question # 9

NAND gate represented by:

Question # 10

The potential difference across depletion region in case of Si is

Question # 11

A transistor has parts:

Question # 12

The input resistance of an op amplifier is.

Question # 13

The impurity in the germinium is usually in the ratio of

Question # 14

Conversion of A.C into D.C is called:

Question # 15

Pulsating output of full wave rectifier can be made smooth by using circuit called.

Question # 16

When a PN-Junction is reverse biased the depletion region is.

Question # 17

Depletion region carries.

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FSC Part 2 Physics Chapter 18 Online Test MCQ's

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FSc Part II Physics Chapter 0 Important MCQ's

Sr.# Question Answer
1 For automatic Switching of streetlight, the op amplifier is used as.
A. Inductor
B. Converter
C. Comparator
D. Thermistor
2 The output voltage of a rectifier is.
A. Smooth
B. Pulsating
C. Alternating
D. Per featly direct
3 A transistor has parts:
A. 2
B. 3
C. 4
D. 5
4 For normal use:
A. Emitter base function is reversed biased
B. Collector base junction is reserved biased
C. Emitter base junction is forward biased
D. Both c and b
5 The output from a full wave rectifier is
A. An ac voltage
B. A dc voltage
C. Zero
D. A pulsating unidirectional voltage
6 The potential difference across the depletion region of germanium is.
A. 0.3 V
B. 0.5 V
C. 0.7 V
D. 0.8 V
7 The potential difference across depletion region in case of Si is
A. 0.6 volt
B. 0.9 volt
C. 0.7 volt
D. 0.2 volt
8 The device which are required to convert various physical quantities into electric voltage are called.
A. Filters
B. Rectifiers
C. Amplifiers
D. Sensors
9 The ratio of potential barriers of Ge to Si at room temperatrue is.
A. 7:3
B. 1:3
C. 2:5
D. 3:7
10 Doping is made comparatively larger in
A. Emitter
B. Base
C. Collector
D. P -type semi conductor

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