Second Year Physics Chapter 18 Online MCQ Test for 2nd Year Physics Chapter 18 Electronics Preparation

FSC Part 2 Physics
Chapter 18 Test

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Physics FSC Part 2 Chapter 18 Online MCQ's Test

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Question # 1

For normal use:

Question # 2

In photovoltaic cell, current is directly proportional to.

Question # 3

The average gap for Germanium at 0K is

Question # 4

The reverse saturation current in a PN junction diode is only due to:

Question # 5

In case of reverse biasing, current is flown due to:

Question # 6

The use of LDR is in the circuit of.

Question # 7

Transistors are made from

Question # 8

Which diode works at reverse biasing.

Question # 9

Transistor was invented by:

Question # 10

The potential difference across depletion region in case of Si is

Question # 11

The chargeless region after formation of Pn junction is called:

Question # 12

For automatic Switching of streetlight, the op amplifier is used as.

Question # 13

Depletion region carries.

Question # 14

Minimum number of semi conductor diodes required for full wave rectification are.

Question # 15

Rectification is the process of converting.

Question # 16

In a transistor, collector current is controlled by:

Question # 17

A transistor has:

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FSC Part 2 Physics Chapter 18 Online Test MCQ's

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FSc Part II Physics Chapter 0 Important MCQ's

Sr.# Question Answer
1 In case of reverse biasing, current is flown due to:
A. Minority charge carriers
B. Majority charge carriers
C. Electrons
D. Protons
2 In a transistor, collector current is controlled by:
A. Collector voltage
B. Base current
C. Collector resistance
D. All of the above
3 X=A+B is the mathematical notation for.
A. OR gate
B. NOR gate
C. NAND gate
D. AND gate
4 A light emitting diode emits light only when
A. Reverse biased
B. Forward biased
C. Unbiased
D. None of these
5 The gate, which changes the logic level to its opposite level is called
A. NOR gate
B. AND gate
C. OR gate
D. NOT gate
6 Light emitting diodes are made from semiconductors.
A. Silicon
B. Germanium
C. Carbon
D. Gallium arsenide
7 The potential barrier for silicon is.
A. 0.7 V
B. 0.5 V
C. 0.3 V
D. 0.9 V
8 In case of op-amp as an inverting amplifier, V+ - V- = 0, this is because
A. Open gain loop is very low
B. Closed loop gain is very high
C. Open loop gain is very high
D. Both (a) and (a)
9 The ratio Beta in transistor is called.
A. Voltage gain
B. Emitter gain
C. Current gain
D. Nuclear gain
10 Doping is made comparatively larger in
A. Emitter
B. Base
C. Collector
D. P -type semi conductor

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