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FSC Part 2 Physics
Chapter 18 Test
Start Chapter 18 Test
FSC Part 2 Physics Chapter Wise Test
(English Medium)
MCQ's Test For Chapter 0 "Physics FSC Part 2 Chapter 18 Online MCQ's Test"
Try The MCQ's Test For Chapter 0 "Physics FSC Part 2 Chapter 18 Online MCQ's Test"
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Total Questions17
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Time Allowed20
Physics FSC Part 2 Chapter 18 Online MCQ's Test
00:00
Question # 1
In a transistor, collector current is controlled by:
Question # 2
The use of LDR is in the circuit of.
Question # 3
Reverse current flows due to
Question # 4
Photodiode is used for:
Question # 5
In case of reverse biasing, current is flown due to:
Question # 6
In an N-type silicon, which of the following statement is true?
Question # 7
For rectification we use.
Question # 8
Transistor was invented by:
Question # 9
In case of op-amp as an inverting amplifier, V+ - V- = 0, this is because
Question # 10
Which component of the transistor has greater contrition of impurity.
Question # 11
The semi conductor diode has the property of
Question # 12
A diode characteristics curve is a plot between
Question # 13
A photo diode can turn its current ON and OFF in
Question # 14
Improper bisting of a transistor circiut produces:
Question # 15
A two inputs NAND gat with inputs a and b has an output '0' if.
Question # 16
Conversation of only one half of A.C. into D.C. is called.
Question # 17
Which is not fundamental logic gate.
FSC Part 2 Physics Chapter 18 Online Test MCQ's
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FSc Part II Physics Chapter 0 Important MCQ's
| Sr.# | Question | Answer |
|---|---|---|
| 1 | The output of two input is zero only when its. |
A. Both inputs are zero
B. Either input is zero
C. Both inputs are one
D. Either input is one
|
| 2 | X=A+B is the mathematical notation for. |
A. OR gate
B. NOR gate
C. NAND gate
D. AND gate
|
| 3 | For normal transistor the emitter current can be given by |
A. IE = IC
B. IE = IC + IB
C. IE = IB
D. None of these
|
| 4 | A PN junction can not be sued a. |
A. Rectifier
B. Amplifier
C. Detector
D. LED
|
| 5 | The open loop gain of the amplifier is order of. |
A. 106
B. 105
C. 107
D. 103
|
| 6 | The potential difference across depletion region in case of Si is |
A. 0.6 volt
B. 0.9 volt
C. 0.7 volt
D. 0.2 volt
|
| 7 | The P.D develop in case of silicon is: |
A. 0.7V
B. 0.3V
C. 0.5V
D. 0.9V
|
| 8 | Transistor was invented by: |
A. Bardeen
B. Micheal faraday
C. Lenz
D. Newton
|
| 9 | In an N-type silicon, which of the following statement is true? |
A. Electrons are majority carriers & trivalent atoms are the dopants
B. Electrons are majority carriers & pentavalent atoms are the dopants
C. Holes are minority carriers & pentavalent atoms are the dopants.
D. Holes are minority carriers & trivavalent atoms are the dopants.
|
| 10 | The semi conductor diode has the property of |
A. Two way conduction
B. Zero conduction
C. One way conduction
D. Amplification
|
Test Questions