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FSC Part 2 Physics
Chapter 18 Test
Start Chapter 18 Test
FSC Part 2 Physics Chapter Wise Test
(English Medium)
MCQ's Test For Chapter 0 "Physics FSC Part 2 Chapter 18 Online MCQ's Test"
Try The MCQ's Test For Chapter 0 "Physics FSC Part 2 Chapter 18 Online MCQ's Test"
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Total Questions17
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Time Allowed20
Physics FSC Part 2 Chapter 18 Online MCQ's Test
00:00
Question # 1
Greater concentration of impurity is added in.
Question # 2
The P.D develop in case of silicon is:
Question # 3
Most of the electrons in the base of an NPN transistor flow:
Question # 4
A transistor has:
Question # 5
The gain of transistor amplifier depends upon
Question # 6
Pulsating output of full wave rectifier can be made smooth by using circuit called.
Question # 7
When transistor are used in digital circuits they usually operate in the :
Question # 8
For rectification we use.
Question # 9
The P.D develop in case of germanium is:
Question # 10
Which component of the transistor has greater contrition of impurity.
Question # 11
In a transistor, collector current is controlled by:
Question # 12
The device which is used as amplifier and works with the negative feedback is.
Question # 13
The gate, which changes the logic level to its opposite level is called
Question # 14
Which device is used as a rectifier?
Question # 15
The chargeless region after formation of Pn junction is called:
Question # 16
An expression for gain of an inverting amplifier is
Question # 17
The average gap for Germanium at 0K is
FSC Part 2 Physics Chapter 18 Online Test MCQ's
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FSc Part II Physics Chapter 0 Important MCQ's
| Sr.# | Question | Answer |
|---|---|---|
| 1 | Output resistance of an op amp is |
A. High
B. Low
C. Zero
D. Equal to input resistance
|
| 2 | The impurity in the germinium is usually in the ratio of |
A. 1:106
B. 1:104
C. 1:108
D. 1:1010
|
| 3 | The use of LDR is in the circuit of. |
A. Logic gate
B. Rectifier
C. Oscillator
D. High Switch
|
| 4 | The potential difference across depletion region in case of Si is |
A. 0.6 volt
B. 0.9 volt
C. 0.7 volt
D. 0.2 volt
|
| 5 | The potential barrier for silicon is. |
A. 0.7 V
B. 0.5 V
C. 0.3 V
D. 0.9 V
|
| 6 | A device which converts low voltage or current to high voltage or current is called. |
A. Transformer
B. AC generator
C. Amplifier
D. Rectifier
|
| 7 | The gate, which changes the logic level to its opposite level is called |
A. NOR gate
B. AND gate
C. OR gate
D. NOT gate
|
| 8 | Reverse current flows due to |
A. Majority charge carriers
B. Minority charge carriers
C. Electrons
D. Holes
|
| 9 | Transistor was discovered by |
A. Young
B. Curie
C. John Bardeen
D. Shale's
|
| 10 | Light emitting diodes are made from semiconductors. |
A. Silicon
B. Germanium
C. Carbon
D. Gallium arsenide
|
Test Questions
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