Physics ICS Part 2 Chapter 18 Online MCQ's Test With Answers

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Physics ICS Part 2 Chapter 18 Online MCQ's Test

Sr. # Questions Answers Choice
1 Which factor does not affect the conductivity of PN-Junction diode. Doping Temperature Voltage Pressure
2 When a PN-Junction is reverse biased the depletion region is. Widened Narrowed Normal None of these
3 Reverse current flows due to Majority charge carriers Minority charge carriers Electrons Holes
4 The potential difference across the depletion region of germanium is. 0.3 V 0.5 V 0.7 V 0.8 V
5 The potential barrier for silicon is. 0.7 V 0.5 V 0.3 V 0.9 V
6 In a transistor, collector current is controlled by: Collector voltage Base current Collector resistance All of the above
7 In a transistor, collector current is controlled by: Collector voltage Base current Collector resistance All of the above
8 Most of the electrons in the base of an NPN transistor flow: Out of the base lead Into the collector Into the emit Into the base supply
9 When transistor are used in digital circuits they usually operate in the : Active region Break down region Saturation & cutoff regions Linear region
10 Improper bisting of a transistor circiut produces: Heavy loading of emitter current Distortion in the output output signal Excessive heat at collector terminal Faculty location of load line
11 The reverse saturation current in a PN junction diode is only due to: Majority carriers Minoritycarriers Acceptor ions Donor ions
12 In an N-type silicon, which of the following statement is true? Electrons are majority carriers & trivalent atoms are the dopants Electrons are majority carriers & pentavalent atoms are the dopants Holes are minority carriers & pentavalent atoms are the dopants. Holes are minority carriers & trivavalent atoms are the dopants.
13 Which device is used as a rectifier? Capacitor Transistor Diode Transformer
14 A transistor has parts: 2 3 4 5
15 Conversion of A.C into D.C is called: Compton effect Rectification Amplification  Pair production
16 OR gate is represented by: X = A+B X=A.B X=A+B X=A.B
17 NAND gate represented by: X = A. B X = A+B X= A.B X=|A+B|
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