ECAT Pre General Science Physics Chapter 18 MCQ Test With Answer

MCQ's Test For ECAT Pre General Science Physics Chapter 18 Electronics

Try The MCQ's Test For ECAT Pre General Science Physics Chapter 18 Electronics

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ECAT Pre General Science Physics Chapter 18 Electronics

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Question # 1

The value of relative permittivity of different dielectrics are

Question # 2

Silicon is one of the mot commonly used:

Question # 3

In AND gate, the output is 1 if:

Question # 4

If both the inputs given to a gate ae 1 such that the output is 0, then it is:

Question # 5

Majority charge carriers in the p-region of p-n junction are:

Question # 6

In the text book, the transistor amplifier circuit is a:

Question # 7

To designate the voltage as low or 0 by a logic gate, the specified minimum value is:

Question # 8

The intensity at a point due to a charge is inversely proportional to

Question # 9

The concept of electric field theory was introduced by

Question # 10

When transistors are used in digital circuits they usually operate in the

Question # 11

By placing a dielectric in between the charges, the electrostatic force between them

Question # 12

In a transistor, collector current is controlled by

Question # 13

In reverse-biased p-n junction, the reverse current is due to flow of:

Question # 14

A potential barrier of 0.7 V exists across p-n junction made from:

Question # 15

To turn the transistor OFF, the base current is set:

Question # 16

.Depletion region contains:

Question # 17

All the valence electrons present in a crystal of silicon are bound in their orbits by

Question # 18

The value of LDR depends upon intensity of:

Question # 19

In an N-type silicon, which of the following statement is true

Question # 20

The SI unit of charge is

Question # 21

Origin of the electric and the gravitational forces

Question # 22

In the forward biases situation, the current flowing across the p-n junction is a few:

Question # 23

In describing function of digital systems, 1 represents:

Question # 24

Op-amp has been discussed as comparator of:

Question # 25

In full wave rectification, simultaneous action is that:

Question # 26

Depletion region contains:

Question # 27

Electric field lines emerge from the charges in

Question # 28

Inverter is the name given to:

Question # 29

Crystal of germanium or silicon in its pure form at absolute zero acts as:

Question # 30

The values 1 and 0 are designated as:

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ECAT Physics Chapter 18 Important MCQ's

Sr.# Question Answer
1 In reverse-biased p-n junction, the reverse current is due to flow of:
A. Minority charge carriers
B. Majority charge carriers
C. Free electrons from p to n-region
D. Holes from n to p-region
2 In AND gate, the output is 1 if:
A. Both inputs are 0
B. Both inputs are 1
C. Only one input is 0
D. Both (A) and (B)
3 Crystal of germanium or silicon in its pure form at absolute zero acts as:
A. A conductor
B. A semiconductor
C. an insulator
D. Both (A) and (C)
4 All the valence electrons present in a crystal of silicon are bound in their orbits by
A. Ionic bond
B. covalent bond
C. Molecular bond
D. Both (A) and (B)
5 To make an LED, it is impreacticable to use:
A. Silicon
B. Gallium arsenide
C. Gallium arsenide phosphide
D. Iron
6 To turn the transistor OFF, the base current is set:
A. At maximum value
B. At zero
C. Either (A) or (B)
D. All are correct
7 To designate the voltage as low or 0 by a logic gate, the specified minimum value is:
A. 0.2 volt
B. 0.8 volt
C. 0 volt
D. 2.0 volt
8 Silicon is one of the mot commonly used:
A. onductor
B. Dielectric
C. Insulator
D. Semiconduction
9 Most of the electrons in the base of an NPN transistor flow
A. Out of the base lead
B. Into the collector
C. Into the emit
D. Into the base supply
10 An electronic computer is basically a vast arrangement of electronic switches which are made from
A. Resistors
B. Transistors
C. N -type crystals
D. P-Type crystals

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