ECAT Pre General Science Physics Chapter 18 MCQ Test With Answer

MCQ's Test For ECAT Pre General Science Physics Chapter 18 Electronics

Try The MCQ's Test For ECAT Pre General Science Physics Chapter 18 Electronics

  • Total Questions30

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ECAT Pre General Science Physics Chapter 18 Electronics

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Question # 1

In describing function of digital systems, 1 represents:

Question # 2

In full wave rectification, simultaneous action is that:

Question # 3

A hole in p-type my be due to:

Question # 4

In the text book, the transistor amplifier circuit is a:

Question # 5

Most of the electrons in the base of an NPN transistor flow

Question # 6

In an N-type silicon, which of the following statement is true

Question # 7

The value of relative permittivity of different dielectrics are

Question # 8

The number of input terminals of an op-amp is:

Question # 9

Majority charge carriers in the p-region of p-n junction are:

Question # 10

A potential barrier of 0.7V exists across p-n junction made from:

Question # 11

The values 1 and 0 are designated as:

Question # 12

In reverse-biased p-n junction, the reverse current is due to flow of:

Question # 13

Silicon is one of the mot commonly used:

Question # 14

A digital system deals with quantities which has discrete values:

Question # 15

A transistor has:

Question # 16

Conversion of A.C. into D.C. is called:

Question # 17

In a transistor, collector current is controlled by

Question # 18

The electric field lines start from

Question # 19

The concept of electric field theory was introduced by

Question # 20

An LED emits light when it is:

Question # 21

If the distance between two charges is doubled, the force between them will become

Question # 22

A diode which can turn its current ON and OFF in nono seconds is called:

Question # 23

Op-amp has been discussed as comparator of:

Question # 24

Inverter is the name given to:

Question # 25

The value of LDR depends upon intensity of:

Question # 26

All the valence electrons present in a crystal of silicon are bound in their orbits by

Question # 27

Electric intensity at a place due to a charged conductor is a

Question # 28

In the forward biases situation, the current flowing across the p-n junction is a few:

Question # 29

To designate the voltage as low or 0 by a logic gate, the specified minimum value is:

Question # 30

Truth table of logic function:

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ECAT Physics Chapter 18 Important MCQ's

Sr.# Question Answer
1 To make an LED, it is impreacticable to use:
A. Silicon
B. Gallium arsenide
C. Gallium arsenide phosphide
D. Iron
2 A hole in p-type my be due to:
A. Trivalent impurity
B. Breking of some covalent bond
C. Pentavalent impurity
D. Germanium
3 By placing a dielectric in between the charges, the electrostatic force between them
A. Is always reduced
B. Is always increased
C. Is not affected
D. Is increased one million times
4 Electric lines of force
A. Intersect each other
B. Are always parallel
C. Are always anti-parallel
D. Never intersect
5 In AND gate, the output is 1 if:
A. Both inputs are 0
B. Both inputs are 1
C. Only one input is 0
D. Both (A) and (B)
6 In a transistor, collector current is controlled by
A. Collector voltage
B. Base current
C. Collector resistance
D. All of the above
7 In reverse-biased p-n junction, the reverse current is due to flow of:
A. Minority charge carriers
B. Majority charge carriers
C. Free electrons from p to n-region
D. Holes from n to p-region
8 If both the inputs given to a gate ae 1 such that the output is 0, then it is:
A. AND gate
B. NOR gate
C. OR gate
D. NOT gate
9 A transistor has:
A. One region
B. Two regions
C. Three regions
D. Four regions
10 To turn the transistor OFF, the base current is set:
A. At maximum value
B. At zero
C. Either (A) or (B)
D. All are correct

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