ECAT Pre General Science Physics Chapter 18 MCQ Test With Answer

MCQ's Test For ECAT Pre General Science Physics Chapter 18 Electronics

Try The MCQ's Test For ECAT Pre General Science Physics Chapter 18 Electronics

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ECAT Pre General Science Physics Chapter 18 Electronics

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Question # 1

Majority charge carriers in the p-region of p-n junction are:

Question # 2

A hole in p-type my be due to:

Question # 3

In the text book, the transistor amplifier circuit is a:

Question # 4

The values 1 and 0 are designated as:

Question # 5

A potential barrier of 0.7 V exists across p-n junction made from:

Question # 6

In reverse-biased p-n junction, the reverse current is due to flow of:

Question # 7

To display a digit of EIGHT, the number of ON LED'S are:

Question # 8

The intensity at a point due to a charge is inversely proportional to

Question # 9

The concept of electric field theory was introduced by

Question # 10

If both the inputs given to a gate ae 1 such that the output is 0, then it is:

Question # 11

A potential barrier of 0.7V exists across p-n junction made from:

Question # 12

Crystal of germanium or silicon in its pure form at absolute zero acts as:

Question # 13

In AND gate, the output is 1 if:

Question # 14

Electric field strength is defined as

Question # 15

The number of input terminals of an op-amp is:

Question # 16

A diode which can turn its current ON and OFF in nono seconds is called:

Question # 17

Electric lines of force

Question # 18

A digital system deals with quantities which has discrete values:

Question # 19

All the valence electrons present in a crystal of silicon are bound in their orbits by

Question # 20

Electric field lines emerge from the charges in

Question # 21

In the forward biases situation, the current flowing across the p-n junction is a few:

Question # 22

The reverse saturation current in a PN junction diode is only due to

Question # 23

To make an LED, it is impreacticable to use:

Question # 24

Origin of the electric and the gravitational forces

Question # 25

By placing a dielectric in between the charges, the electrostatic force between them

Question # 26

If the distance between two charges is doubled, the force between them will become

Question # 27

The value of relative permittivity of different dielectrics are

Question # 28

Depletion region contains:

Question # 29

In full wave rectification, simultaneous action is that:

Question # 30

Most of the electrons in the base of an NPN transistor flow

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ECAT Physics Chapter 18 Important MCQ's

Sr.# Question Answer
1 In a transistor, collector current is controlled by
A. Collector voltage
B. Base current
C. Collector resistance
D. All of the above
2 To make an LED, it is impreacticable to use:
A. Silicon
B. Gallium arsenide
C. Gallium arsenide phosphide
D. Iron
3 Majority charge carriers in the p-region of p-n junction are:
A. electrons
B. positrons
C. Holes
D. Neutrons
4 The SI unit of charge is
A. Ampere
B. Watt
C. Coulomb
D. Volt
5 To designate the voltage as low or 0 by a logic gate, the specified minimum value is:
A. 0.2 volt
B. 0.8 volt
C. 0 volt
D. 2.0 volt
6 Crystal of germanium or silicon in its pure form at absolute zero acts as:
A. A conductor
B. A semiconductor
C. an insulator
D. Both (A) and (C)
7 A hole in p-type my be due to:
A. Trivalent impurity
B. Breking of some covalent bond
C. Pentavalent impurity
D. Germanium
8 Op-amp has been discussed as comparator of:
A. Distances
B. Voltages
C. Velocities
D. Magnetic fields
9 Field lines are closer to each other in the region where the filed is
A. Stronger
B. Weaker
C. Much weaker
D. Absent
10 Electric lines of force
A. Intersect each other
B. Are always parallel
C. Are always anti-parallel
D. Never intersect

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