ECAT Pre General Science Physics Chapter 18 MCQ Test With Answer

MCQ's Test For ECAT Pre General Science Physics Chapter 18 Electronics

Try The MCQ's Test For ECAT Pre General Science Physics Chapter 18 Electronics

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ECAT Pre General Science Physics Chapter 18 Electronics

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Question # 1

A potential barrier of 0.7 V exists across p-n junction made from:

Question # 2

In a transistor, collector current is controlled by

Question # 3

Depletion region contains:

Question # 4

Truth table of logic function:

Question # 5

A digital system deals with quantities which has discrete values:

Question # 6

Electric field strength is defined as

Question # 7

Origin of the electric and the gravitational forces

Question # 8

A potential barrier of 0.7V exists across p-n junction made from:

Question # 9

Majority charge carriers in the p-region of p-n junction are:

Question # 10

If both the inputs given to a gate ae 1 such that the output is 0, then it is:

Question # 11

Whenever a covalent bond breaks, it creates:

Question # 12

In reverse-biased p-n junction, the reverse current is due to flow of:

Question # 13

The use of chips in electrons is described in the form of:

Question # 14

In full wave rectification, simultaneous action is that:

Question # 15

Michael Faraday is known by his work on

Question # 16

Computer chips are made from:

Question # 17

The concept of electric field theory was introduced by

Question # 18

Silicon is one of the mot commonly used:

Question # 19

A diode which can turn its current ON and OFF in nono seconds is called:

Question # 20

Electric intensity at a place due to a charged conductor is a

Question # 21

In the forward biases situation, the current flowing across the p-n junction is a few:

Question # 22

When transistors are used in digital circuits they usually operate in the

Question # 23

An electronic computer is basically a vast arrangement of electronic switches which are made from

Question # 24

The SI unit of charge is

Question # 25

Electric field lines emerge from the charges in

Question # 26

A hole in p-type my be due to:

Question # 27

To make an LED, it is impreacticable to use:

Question # 28

Improper biasing of a transistor circuit produces

Question # 29

All the valence electrons present in a crystal of silicon are bound in their orbits by

Question # 30

The intensity at a point due to a charge is inversely proportional to

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ECAT Physics Chapter 18 Important MCQ's

Sr.# Question Answer
1 Electric intensity at a place due to a charged conductor is a
A. Scalar quantity
B. Vector quantity
C. Semi vector and semi scalar
D. Dimensionless quantity
2 A potential barrier of 0.7 V exists across p-n junction made from:
A. Germanium
B. Silicon
C. Arsenic
D. Gallium
3 If both the inputs given to a gate ae 1 such that the output is 0, then it is:
A. AND gate
B. NOR gate
C. OR gate
D. NOT gate
4 In an N-type silicon, which of the following statement is true
A. Electrons are majority carriers and trivalent atoms are the dopants
B. Electrons are minority carriers and pentavalent atoms are the dopants
C. Holes are minority carriers and pentavalent atoms are the dopants
D. Holes are majority carriers and trivalent atoms are the dopants
5 To display a digit of EIGHT, the number of ON LED'S are:
A. Two
B. Three
C. Five
D. Seven
6 Majority charge carriers in the p-region of p-n junction are:
A. electrons
B. positrons
C. Holes
D. Neutrons
7 In a transistor, collector current is controlled by
A. Collector voltage
B. Base current
C. Collector resistance
D. All of the above
8 A potential barrier of 0.7V exists across p-n junction made from:
A. Germanium
B. Silicon
C. Arsenic
D. Gallium
9 Whenever a covalent bond breaks, it creates:
A. An electron
B. A hole
C. An electron-hole pair
D. A positron
10 Truth table of logic function:
A. Summarizes its output values
B. Tabulates all its input conditions only
C. Display all its input/output possibilites
D. Is not based on logic algebra

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