ECAT Pre General Science Physics Chapter 18 MCQ Test With Answer

MCQ's Test For ECAT Pre General Science Physics Chapter 18 Electronics

Try The MCQ's Test For ECAT Pre General Science Physics Chapter 18 Electronics

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ECAT Pre General Science Physics Chapter 18 Electronics

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Question # 1

A potential barrier of 0.7V exists across p-n junction made from:

Question # 2

Improper biasing of a transistor circuit produces

Question # 3

If both the inputs given to a gate ae 1 such that the output is 0, then it is:

Question # 4

To designate the voltage as low or 0 by a logic gate, the specified minimum value is:

Question # 5

The value of LDR depends upon intensity of:

Question # 6

An electronic computer is basically a vast arrangement of electronic switches which are made from

Question # 7

By placing a dielectric in between the charges, the electrostatic force between them

Question # 8

The concept of electric field theory was introduced by

Question # 9

The use of chips in electrons is described in the form of:

Question # 10

Most of the electrons in the base of an NPN transistor flow

Question # 11

The intensity at a point due to a charge is inversely proportional to

Question # 12

When transistors are used in digital circuits they usually operate in the

Question # 13

A digital system deals with quantities which has discrete values:

Question # 14

In reverse-biased p-n junction, the reverse current is due to flow of:

Question # 15

Field lines are closer to each other in the region where the filed is

Question # 16

Depletion region contains:

Question # 17

The values 1 and 0 are designated as:

Question # 18

.Depletion region contains:

Question # 19

The electric field lines start from

Question # 20

Michael Faraday is known by his work on

Question # 21

A diode which can turn its current ON and OFF in nono seconds is called:

Question # 22

The value of relative permittivity of different dielectrics are

Question # 23

In a transistor, collector current is controlled by

Question # 24

Electric intensity at a place due to a charged conductor is a

Question # 25

In describing function of digital systems, 1 represents:

Question # 26

The reverse saturation current in a PN junction diode is only due to

Question # 27

In the text book, the transistor amplifier circuit is a:

Question # 28

Electric lines of force

Question # 29

Whenever a covalent bond breaks, it creates:

Question # 30

A potential barrier of 0.7 V exists across p-n junction made from:

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ECAT Physics Chapter 18 Important MCQ's

Sr.# Question Answer
1 An LED emits light when it is:
A. Forward biased
B. Reverse biased
C. Operated without battery
D. Operated with heat source
2 A potential barrier of 0.7V exists across p-n junction made from:
A. Germanium
B. Silicon
C. Arsenic
D. Gallium
3 The SI unit of charge is
A. Ampere
B. Watt
C. Coulomb
D. Volt
4 A diode which can turn its current ON and OFF in nono seconds is called:
A. LED
B. Photodiode
C. An ordinary diode.
D. Both (A) and (B)
5 The number of input terminals of an op-amp is:
A. One
B. Two
C. Three
D. Four
6 Electric intensity at a place due to a charged conductor is a
A. Scalar quantity
B. Vector quantity
C. Semi vector and semi scalar
D. Dimensionless quantity
7 The reverse saturation current in a PN junction diode is only due to
A. Majority carriers
B. Minority Carriers
C. Acceptor ions
D. Donor ions
8 Field lines are closer to each other in the region where the filed is
A. Stronger
B. Weaker
C. Much weaker
D. Absent
9 A transistor has:
A. One region
B. Two regions
C. Three regions
D. Four regions
10 Silicon is one of the mot commonly used:
A. onductor
B. Dielectric
C. Insulator
D. Semiconduction

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