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MCQ's Test For Physics ECAT Pre Engineering Chapter 18 Electronics Physics
Try The MCQ's Test For Physics ECAT Pre Engineering Chapter 18 Electronics Physics
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Total Questions15
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Time Allowed20
Physics ECAT Pre Engineering Chapter 18 Electronics Physics
00:00
Question # 1
In an N-type silicon, which of the following statement is true
Question # 2
The intensity at a point due to a charge is inversely proportional to
Question # 3
A digital system deals with quantities which has discrete values:
Question # 4
The values 1 and 0 are designated as:
Question # 5
Origin of the electric and the gravitational forces
Question # 6
In describing function of digital systems, 1 represents:
Question # 7
In the text book, the transistor amplifier circuit is a:
Question # 8
To display a digit of EIGHT, the number of ON LED'S are:
Question # 9
The value of relative permittivity of different dielectrics are
Question # 10
Field lines are closer to each other in the region where the filed is
Question # 11
Inverter is the name given to:
Question # 12
By placing a dielectric in between the charges, the electrostatic force between them
Question # 13
Electric lines of force
Question # 14
Silicon is one of the mot commonly used:
Question # 15
Op-amp has been discussed as comparator of:
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M Muhammad Sufyan 01 - Jun - 2024 00 Min 04 Sec 60/60 -
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ECAT Physics Chapter 18 Important MCQ's
| Sr.# | Question | Answer |
|---|---|---|
| 1 | In an N-type silicon, which of the following statement is true |
A. Electrons are majority carriers and trivalent atoms are the dopants
B. Electrons are minority carriers and pentavalent atoms are the dopants
C. Holes are minority carriers and pentavalent atoms are the dopants
D. Holes are majority carriers and trivalent atoms are the dopants
|
| 2 | The number of LED'S needed to display all the digits is: |
A. Four
B. Five
C. Nine
D. Six
|
| 3 | An electronic computer is basically a vast arrangement of electronic switches which are made from |
A. Resistors
B. Transistors
C. N -type crystals
D. P-Type crystals
|
| 4 | A hole in p-type my be due to: |
A. Trivalent impurity
B. Breking of some covalent bond
C. Pentavalent impurity
D. Germanium
|
| 5 | In a transistor, collector current is controlled by |
A. Collector voltage
B. Base current
C. Collector resistance
D. All of the above
|
| 6 | The electric field lines start from |
A. Positive charge
B. Negative charge
C. Either A or B
D. Neutron
|
| 7 | All the valence electrons present in a crystal of silicon are bound in their orbits by |
A. Ionic bond
B. covalent bond
C. Molecular bond
D. Both (A) and (B)
|
| 8 | In reverse-biased p-n junction, the reverse current is due to flow of: |
A. Minority charge carriers
B. Majority charge carriers
C. Free electrons from p to n-region
D. Holes from n to p-region
|
| 9 | In the text book, the transistor amplifier circuit is a: |
A. Common emitter circuit
B. Common collector circuit
C. Common base circuit
D. Any of these
|
| 10 | The value of LDR depends upon intensity of: |
A. Sound falling on it
B. Current passing through it
C. Magnetic field surrounding it
D. Light falling on it
|
Test Questions
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SHAHID FAROOQ
21 Jun 2019good practice forprepration of test