ECAT Pre Engineering Physics Chapter 18 MCQ Test With Answer

MCQ's Test For Physics ECAT Pre Engineering Chapter 18 Electronics Physics

Try The MCQ's Test For Physics ECAT Pre Engineering Chapter 18 Electronics Physics

  • Total Questions15

  • Time Allowed20

Physics ECAT Pre Engineering Chapter 18 Electronics Physics

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Question # 1

.Depletion region contains:

Question # 2

In the text book, the transistor amplifier circuit is a:

Question # 3

Whenever a covalent bond breaks, it creates:

Question # 4

Improper biasing of a transistor circuit produces

Question # 5

In an N-type silicon, which of the following statement is true

Question # 6

A transistor has:

Question # 7

The number of input terminals of an op-amp is:

Question # 8

In AND gate, the output is 1 if:

Question # 9

The value of LDR depends upon intensity of:

Question # 10

A diode which can turn its current ON and OFF in nono seconds is called:

Question # 11

Electric intensity at a place due to a charged conductor is a

Question # 12

Silicon is one of the mot commonly used:

Question # 13

Truth table of logic function:

Question # 14

Electric field strength is defined as

Question # 15

In reverse-biased p-n junction, the reverse current is due to flow of:

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ECAT Physics Chapter 18 Important MCQ's

Sr.# Question Answer
1 The electric field lines start from
A. Positive charge
B. Negative charge
C. Either A or B
D. Neutron
2 By placing a dielectric in between the charges, the electrostatic force between them
A. Is always reduced
B. Is always increased
C. Is not affected
D. Is increased one million times
3 To make an LED, it is impreacticable to use:
A. Silicon
B. Gallium arsenide
C. Gallium arsenide phosphide
D. Iron
4 Electric intensity at a place due to a charged conductor is a
A. Scalar quantity
B. Vector quantity
C. Semi vector and semi scalar
D. Dimensionless quantity
5 The use of chips in electrons is described in the form of:
A. Yellow boxes
B. Black boxes
C. Red boxes
D. White boxes
6 In a transistor, collector current is controlled by
A. Collector voltage
B. Base current
C. Collector resistance
D. All of the above
7 A potential barrier of 0.7V exists across p-n junction made from:
A. Germanium
B. Silicon
C. Arsenic
D. Gallium
8 When transistors are used in digital circuits they usually operate in the
A. Active region
B. Breakdown region
C. Saturation and cutoff regions
D. Linear region
9 Improper biasing of a transistor circuit produces
A. Heavy loading of emitter current
B. Distortion in the output signal
C. Excessive heat at collector terminal
D. Faulty location of load line
10 The value of relative permittivity of different dielectrics are
A. Equal
B. Different
C. Greater than one
D. Smaller than one

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  • SHAHID FAROOQ

    SHAHID FAROOQ

    21 Jun 2019

    good practice forprepration of test

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