ECAT Pre Engineering Physics Chapter 18 MCQ Test With Answer

MCQ's Test For Physics ECAT Pre Engineering Chapter 18 Electronics Physics

Try The MCQ's Test For Physics ECAT Pre Engineering Chapter 18 Electronics Physics

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Physics ECAT Pre Engineering Chapter 18 Electronics Physics

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Question # 1

When transistors are used in digital circuits they usually operate in the

Question # 2

The number of input terminals of an op-amp is:

Question # 3

Electric field strength is defined as

Question # 4

A hole in p-type my be due to:

Question # 5

A transistor has:

Question # 6

The values 1 and 0 are designated as:

Question # 7

Crystal of germanium or silicon in its pure form at absolute zero acts as:

Question # 8

If the distance between two charges is doubled, the force between them will become

Question # 9

The value of LDR depends upon intensity of:

Question # 10

A diode which can turn its current ON and OFF in nono seconds is called:

Question # 11

A potential barrier of 0.7 V exists across p-n junction made from:

Question # 12

To designate the voltage as low or 0 by a logic gate, the specified minimum value is:

Question # 13

Depletion region contains:

Question # 14

Improper biasing of a transistor circuit produces

Question # 15

Most of the electrons in the base of an NPN transistor flow

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ECAT Physics Chapter 18 Important MCQ's

Sr.# Question Answer
1 The SI unit of charge is
A. Ampere
B. Watt
C. Coulomb
D. Volt
2 Majority charge carriers in the p-region of p-n junction are:
A. electrons
B. positrons
C. Holes
D. Neutrons
3 The intensity at a point due to a charge is inversely proportional to
A. Amount of charge
B. Size of the charge
C. Distance between charge and the point
D. Square of the distance from the charge
4 In full wave rectification, simultaneous action is that:
A. Two diodes conduct and two do not.
B. One diode conduct and three do not.
C. Three diodes conduct and one does not.
D. All the four diodes conduct
5 A potential barrier of 0.7V exists across p-n junction made from:
A. Germanium
B. Silicon
C. Arsenic
D. Gallium
6 Crystal of germanium or silicon in its pure form at absolute zero acts as:
A. A conductor
B. A semiconductor
C. an insulator
D. Both (A) and (C)
7 A hole in p-type my be due to:
A. Trivalent impurity
B. Breking of some covalent bond
C. Pentavalent impurity
D. Germanium
8 Conversion of A.C. into D.C. is called:
A. Reftification
B. Amplification
C. Electric induction
D. Magnetic induction
9 Silicon is one of the mot commonly used:
A. onductor
B. Dielectric
C. Insulator
D. Semiconduction
10 Inverter is the name given to:
A. NOT gate
B. OR gate
C. NOR gate
D. AND gate

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