ECAT Pre Engineering Physics Chapter 18 MCQ Test With Answer

MCQ's Test For Physics ECAT Pre Engineering Chapter 18 Electronics Physics

Try The MCQ's Test For Physics ECAT Pre Engineering Chapter 18 Electronics Physics

  • Total Questions15

  • Time Allowed20

Physics ECAT Pre Engineering Chapter 18 Electronics Physics

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Question # 1

Michael Faraday is known by his work on

Question # 2

A diode which can turn its current ON and OFF in nono seconds is called:

Question # 3

Origin of the electric and the gravitational forces

Question # 4

Most of the electrons in the base of an NPN transistor flow

Question # 5

Electric intensity at a place due to a charged conductor is a

Question # 6

The concept of electric field theory was introduced by

Question # 7

By placing a dielectric in between the charges, the electrostatic force between them

Question # 8

In describing function of digital systems, 1 represents:

Question # 9

A hole in p-type my be due to:

Question # 10

A potential barrier of 0.7V exists across p-n junction made from:

Question # 11

In a transistor, collector current is controlled by

Question # 12

Majority charge carriers in the p-region of p-n junction are:

Question # 13

To display a digit of EIGHT, the number of ON LED'S are:

Question # 14

An electronic computer is basically a vast arrangement of electronic switches which are made from

Question # 15

A digital system deals with quantities which has discrete values:

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ECAT Physics Chapter 18 Important MCQ's

Sr.# Question Answer
1 In AND gate, the output is 1 if:
A. Both inputs are 0
B. Both inputs are 1
C. Only one input is 0
D. Both (A) and (B)
2 The intensity at a point due to a charge is inversely proportional to
A. Amount of charge
B. Size of the charge
C. Distance between charge and the point
D. Square of the distance from the charge
3 A potential barrier of 0.7 V exists across p-n junction made from:
A. Germanium
B. Silicon
C. Arsenic
D. Gallium
4 Silicon is one of the mot commonly used:
A. onductor
B. Dielectric
C. Insulator
D. Semiconduction
5 A transistor has:
A. One region
B. Two regions
C. Three regions
D. Four regions
6 In the forward biases situation, the current flowing across the p-n junction is a few:
A. amperes
B. Milli amperes
C. Micro amperes
D. Pico amperes
7 The value of relative permittivity of different dielectrics are
A. Equal
B. Different
C. Greater than one
D. Smaller than one
8 To make an LED, it is impreacticable to use:
A. Silicon
B. Gallium arsenide
C. Gallium arsenide phosphide
D. Iron
9 In an N-type silicon, which of the following statement is true
A. Electrons are majority carriers and trivalent atoms are the dopants
B. Electrons are minority carriers and pentavalent atoms are the dopants
C. Holes are minority carriers and pentavalent atoms are the dopants
D. Holes are majority carriers and trivalent atoms are the dopants
10 In full wave rectification, simultaneous action is that:
A. Two diodes conduct and two do not.
B. One diode conduct and three do not.
C. Three diodes conduct and one does not.
D. All the four diodes conduct

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