ECAT Pre Engineering Physics Chapter 18 MCQ Test With Answer

MCQ's Test For Physics ECAT Pre Engineering Chapter 18 Electronics Physics

Try The MCQ's Test For Physics ECAT Pre Engineering Chapter 18 Electronics Physics

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Physics ECAT Pre Engineering Chapter 18 Electronics Physics

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Question # 1

Majority charge carriers in the p-region of p-n junction are:

Question # 2

Crystal of germanium or silicon in its pure form at absolute zero acts as:

Question # 3

To display a digit of EIGHT, the number of ON LED'S are:

Question # 4

A transistor has:

Question # 5

Conversion of A.C. into D.C. is called:

Question # 6

The reverse saturation current in a PN junction diode is only due to

Question # 7

A potential barrier of 0.7V exists across p-n junction made from:

Question # 8

In full wave rectification, simultaneous action is that:

Question # 9

Depletion region contains:

Question # 10

An electronic computer is basically a vast arrangement of electronic switches which are made from

Question # 11

The use of chips in electrons is described in the form of:

Question # 12

In reverse-biased p-n junction, the reverse current is due to flow of:

Question # 13

Electric intensity at a place due to a charged conductor is a

Question # 14

To designate the voltage as low or 0 by a logic gate, the specified minimum value is:

Question # 15

Michael Faraday is known by his work on

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ECAT Physics Chapter 18 Important MCQ's

Sr.# Question Answer
1 The use of chips in electrons is described in the form of:
A. Yellow boxes
B. Black boxes
C. Red boxes
D. White boxes
2 Electric intensity at a place due to a charged conductor is a
A. Scalar quantity
B. Vector quantity
C. Semi vector and semi scalar
D. Dimensionless quantity
3 The electric field lines start from
A. Positive charge
B. Negative charge
C. Either A or B
D. Neutron
4 Origin of the electric and the gravitational forces
A. Was known in 1911 A.D.
B. Was known in 1811 A.D.
C. Was known in 1711 A.D.
D. is still unknown
5 The intensity at a point due to a charge is inversely proportional to
A. Amount of charge
B. Size of the charge
C. Distance between charge and the point
D. Square of the distance from the charge
6 .Depletion region contains:
A. Protons
B. Positive ions
C. Negative ions
D. Both (B) and (C)
7 If the distance between two charges is doubled, the force between them will become
A. Double
B. Half
C. Three times
D. One fourth
8 A hole in p-type my be due to:
A. Trivalent impurity
B. Breking of some covalent bond
C. Pentavalent impurity
D. Germanium
9 In the forward biases situation, the current flowing across the p-n junction is a few:
A. amperes
B. Milli amperes
C. Micro amperes
D. Pico amperes
10 Depletion region contains:
A. Protons
B. Positive ions
C. Negative ions
D. Both (B) and (C)

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