ECAT Pre Engineering Physics Chapter 18 MCQ Test With Answer

MCQ's Test For Physics ECAT Pre Engineering Chapter 18 Electronics Physics

Try The MCQ's Test For Physics ECAT Pre Engineering Chapter 18 Electronics Physics

  • Total Questions15

  • Time Allowed20

Physics ECAT Pre Engineering Chapter 18 Electronics Physics

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Question # 1

In the text book, the transistor amplifier circuit is a:

Question # 2

In AND gate, the output is 1 if:

Question # 3

The reverse saturation current in a PN junction diode is only due to

Question # 4

A potential barrier of 0.7V exists across p-n junction made from:

Question # 5

The number of LED'S needed to display all the digits is:

Question # 6

Michael Faraday is known by his work on

Question # 7

The intensity at a point due to a charge is inversely proportional to

Question # 8

In a transistor, collector current is controlled by

Question # 9

The value of LDR depends upon intensity of:

Question # 10

When transistors are used in digital circuits they usually operate in the

Question # 11

To turn the transistor OFF, the base current is set:

Question # 12

A diode which can turn its current ON and OFF in nono seconds is called:

Question # 13

In full wave rectification, simultaneous action is that:

Question # 14

Inverter is the name given to:

Question # 15

A potential barrier of 0.7 V exists across p-n junction made from:

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ECAT Physics Chapter 18 Important MCQ's

Sr.# Question Answer
1 Electric field lines emerge from the charges in
A. One dimension
B. Two dimensions
C. Three dimensions
D. Four dimensions
2 The value of relative permittivity of different dielectrics are
A. Equal
B. Different
C. Greater than one
D. Smaller than one
3 In an N-type silicon, which of the following statement is true
A. Electrons are majority carriers and trivalent atoms are the dopants
B. Electrons are minority carriers and pentavalent atoms are the dopants
C. Holes are minority carriers and pentavalent atoms are the dopants
D. Holes are majority carriers and trivalent atoms are the dopants
4 All the valence electrons present in a crystal of silicon are bound in their orbits by
A. Ionic bond
B. covalent bond
C. Molecular bond
D. Both (A) and (B)
5 The reverse saturation current in a PN junction diode is only due to
A. Majority carriers
B. Minority Carriers
C. Acceptor ions
D. Donor ions
6 Majority charge carriers in the p-region of p-n junction are:
A. electrons
B. positrons
C. Holes
D. Neutrons
7 .Depletion region contains:
A. Protons
B. Positive ions
C. Negative ions
D. Both (B) and (C)
8 Electric field strength is defined as
A. Work done on unit charge
B. Force exerted on unit charge
C. Distance covered by unit charge
D. Power exerted by unit charge
9 In the text book, the transistor amplifier circuit is a:
A. Common emitter circuit
B. Common collector circuit
C. Common base circuit
D. Any of these
10 Improper biasing of a transistor circuit produces
A. Heavy loading of emitter current
B. Distortion in the output signal
C. Excessive heat at collector terminal
D. Faulty location of load line

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  • SHAHID FAROOQ

    SHAHID FAROOQ

    21 Jun 2019

    good practice forprepration of test

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