Question # 1

Improper bisting of a transistor circiut produces:

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Heavy loading of emitter current

Distortion in the output output signal

Excessive heat at collector terminal

Faculty location of load line

Transistors are made from

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Plastics

Metals

Insulator

Doped semi conductors

Transistor was invented by:

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Bardeen

Micheal faraday

Lenz

Newton

For normal transistor the emitter current can be given by

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I_E = I_C

I_E = I_C + I_B

I_E = I_B

None of these

A transistor has parts:

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2

3

4

5

NAND gate represented by:

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X = A. B

X = A+B

X= A.B

X=|A+B|

An expression for gain of an inverting amplifier is

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(R₁R₂)

None of these

The circuit of full wave rectification consist of

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Three diodes

Four diodes

Two diodes

One diode

The potential difference across depletion region in case of Si is

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0.6 volt

0.9 volt

0.7 volt

0.2 volt

Minimum number of semi conductor diodes required for full wave rectification are.

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1

2

3

4

Photo diode is used for detection of.

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Heat

Magnet

Current

Light

Transistor was discovered by

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Young

Curie

John Bardeen

Shale's

The potential difference across the depletion region of germanium is.

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0.3 V

0.5 V

0.7 V

0.8 V

The colour of light emitted by a LED depends on.

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It forward biased

Its reverse biased

Unbiased

None of these

A diode characteristic curve is a plot between

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Current and time

Voltage and time

Voltage and current

Forward voltage and reverse voltage

In a certain circuit, I_{B = 40 µA,}I_C= 20 mA

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450 amp

0.45 amp

5 m amp

500 amp

Most of the electrons in the base of an NPN transistor flow:

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Out of the base lead

Into the collector

Into the emit

Into the base supply

Light emitting diodes are made from semiconductors.

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Silicon

Germanium

Carbon

Gallium arsenide

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