Question # 1

Silicon is one of the mot commonly used:

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onductor

Dielectric

Insulator

Semiconduction

Both (B) and (C)

The value of LDR depends upon intensity of:

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Sound falling on it

Current passing through it

Magnetic field surrounding it

Light falling on it

Non of these

Conversion of A.C. into D.C. is called:

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Reftification

Amplification

Electric induction

Magnetic induction

None of these

Origin of the electric and the gravitational forces

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Was known in 1911 A.D.

Was known in 1811 A.D.

Was known in 1711 A.D.

is still unknown

Was known in 1611 A.D.

In a transistor, collector current is controlled by

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Collector voltage

Base current

Collector resistance

All of the above

If both the inputs given to a gate ae 1 such that the output is 0, then it is:

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AND gate

NOR gate

OR gate

NOT gate

Both (A) and (C)

In the forward biases situation, the current flowing across the p-n junction is a few:

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amperes

Milli amperes

Micro amperes

Pico amperes

None of these

A hole in p-type my be due to:

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Trivalent impurity

Breking of some covalent bond

Pentavalent impurity

Germanium

Either (A) or (B)

The reverse saturation current in a PN junction diode is only due to

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Majority carriers

Minority Carriers

Acceptor ions

Donor ions

Op-amp has been discussed as comparator of:

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Distances

Voltages

Velocities

Magnetic fields

Both (A) and (C)

Electric intensity at a place due to a charged conductor is a

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Scalar quantity

Vector quantity

Semi vector and semi scalar

Dimensionless quantity

Both A and D are true

Electric field strength is defined as

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Work done on unit charge

Force exerted on unit charge

Distance covered by unit charge

Power exerted by unit charge

None of these

Electric lines of force

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Intersect each other

Are always parallel

Are always anti-parallel

Never intersect

None of these

.Depletion region contains:

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Protons

Positive ions

Negative ions

Both (B) and (C)

Both (A) and (C)

In reverse-biased p-n junction, the reverse current is due to flow of:

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Minority charge carriers

Majority charge carriers

Free electrons from p to n-region

Holes from n to p-region

all are true except (B)

Most of the electrons in the base of an NPN transistor flow

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Out of the base lead

Into the collector

Into the emit

Into the base supply

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